期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 15, 期 10, 页码 1345-1347出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2003.818064
关键词
AlGaInP; Fresnel loss; leakage current; light emitting diode (LED); passivation; roughness; sulfide
The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss,and effective injection of carriers were demonstrated.
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