期刊
IEEE SENSORS JOURNAL
卷 3, 期 5, 页码 548-553出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2003.817670
关键词
Ga2O3; propene; Schottky diode; silicon carbide (SiC); zinc oxide (ZnO)
In this paper, a novel me-tal-reactive insulator-silicon carbide device with a catalytic layer for hydrocarbon gas-sensing is presented. This structure, employed as a Schottky diode, utilizes sol-gel prepared Ga2O3-ZnO layer as the reactive insulator. The sensor has been exposed to propene gas, which lowers the barrier height of the diode. The responsies were stable and repeatable at operating temperatures between 300 and 600 degreesC. The response to propene in different ambients was examined. The effect of diode bias has been investigated by analyzing the sensors response to various propene concentrations when held at constant currents of 2 and 8 mA.
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