期刊
JOURNAL OF CRYSTAL GROWTH
卷 257, 期 3-4, 页码 326-332出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S0022-0248(03)01477-5
关键词
high resolution X-ray diffraction; photoluminescence; low-pressure metalorganic chemical deposition; multiple quantum wells; InxGa1-xN/InyGa1-yN
We reported the effect of trimethylindium (TMIn) flow rate in the barrier layer on the structural and optical properties of InxGa1-xN/InyGa1-yN multiple quantum wells (MQWs) grown on (0001)-oriented sapphire substrates by low-pressure metalorganic chemical deposition (LP-MOCVD). It was found that the change of TMIn flow rate dramatically influences the interface quality and optical properties. Temperature-dependent photoluminescence (PL) and high-resolution X-ray diffraction (HRXRD) measurements provide proof evidence that the increment of TMIn flow rate deteriorates the interfacial abruptness, decreases the emission wavelength (blue shift) and the efficiency of nonradiative recombination process. (C) 2003 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据