期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 36, 期 19, 页码 R289-R308出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/36/19/R01
关键词
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Combining ferromagnetic and semiconductor materials is a challenging route to create new options for electronic devices in which the spin of the electron is employed. The spin-valve transistor (SVT) is the first of such hybrid devices shown to work successfully. This review describes the basic science and technology of the SVT and derived devices, such as the magnetic tunnel transistor.
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