期刊
ADVANCED MATERIALS
卷 15, 期 20, 页码 1754-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200305439
关键词
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The synthesis of high-quality SnO2 nanowires by a laser ablation method is demonstrated. Single nanowire transistors have been fabricated, and their electronic transport and photoconduction properties have been studied. The Figure shows a schematic of the experimental setup for polarized UV detection.
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