期刊
APPLIED PHYSICS LETTERS
卷 83, 期 16, 页码 3401-3403出版社
AMER INST PHYSICS
DOI: 10.1063/1.1621729
关键词
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In situ Ga-doped ZnO nanotips were grown on amorphous fused silica substrates using metalorganic chemical vapor deposition. Structural, optical, and electrical properties of as-grown ZnO nanotips are investigated. Despite the amorphous nature of fused silica substrates, Ga-doped ZnO nanotips are found to be single crystalline and oriented along the c-axis. Photoluminescence (PL) spectra of Ga-doped ZnO nanotips are dominated by near-band-edge emission with negligible deep-level emission. The increase in PL intensity from Ga doping has been attributed to the increase of Ga donor-related impurity emission. Current-voltage characteristics of the ZnO nanotips are measured by conductive-tip atomic force microscopy, which shows the conductivity enhancement due to Ga doping. (C) 2003 American Institute of Physics.
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