期刊
IEEE JOURNAL OF QUANTUM ELECTRONICS
卷 39, 期 11, 页码 1498-1503出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2003.818277
关键词
dispersion; nonlinear optics; silicon; two-photon absorption
An analysis of the dispersion of two-photon absorption and Kerr nonlinearity of indirect semiconductors below the indirect bandgap is presented. Similar to the case of linear absorption, third-order nonlinear processes are found to be mediated by phonon-assisted transitions. The Kerr coefficient n(2) is positive below the indirect gap, and the dispersion of the third-order non-linearities is reduced relative to direct semiconductors. The results are compared with existing experimental data in silicon.
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