4.4 Article

Dispersion of phonon-assisted nonresonant third-order nonlinearities

期刊

IEEE JOURNAL OF QUANTUM ELECTRONICS
卷 39, 期 11, 页码 1498-1503

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2003.818277

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dispersion; nonlinear optics; silicon; two-photon absorption

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An analysis of the dispersion of two-photon absorption and Kerr nonlinearity of indirect semiconductors below the indirect bandgap is presented. Similar to the case of linear absorption, third-order nonlinear processes are found to be mediated by phonon-assisted transitions. The Kerr coefficient n(2) is positive below the indirect gap, and the dispersion of the third-order non-linearities is reduced relative to direct semiconductors. The results are compared with existing experimental data in silicon.

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