期刊
SURFACE SCIENCE
卷 545, 期 1-2, 页码 L735-L740出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.susc.2003.08.046
关键词
scanning tunneling microscopy; photoelectron diffraction; nickel; boron nitride; surface defects
The growth of hexagonal boron nitride (h-BN) on Ni(1 1 1) at submonolayer coverages results in triangular islands with two different orientations. In combining X-ray photoelectron diffraction and scanning tunneling microscopy it is demonstrated that these two island types correspond to fcc and hcp domains of h-BN/Ni(1 1 1). The domain boundaries appear as defect lines that are also present in complete h-BN monolayers. Based on the experimental data, structural models for the two domains and the defect lines are discussed. (C) 2003 Elsevier B.V. All rights reserved.
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