4.6 Article

Quantum pumping and quantized magnetoresistance in a Hall bar

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PHYSICAL REVIEW B
卷 68, 期 20, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.68.205316

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We show how a dc current can be generated in a Hall bar without applying a bias voltage. The Hall resistance R-H that corresponds to this pumped current is quantized, just as in the usual integer quantum Hall effect (IQHE). In contrast with the IQHE, however, the longitudinal resistance R-xx does not vanish on the plateaus, but equals the Hall resistance. We propose an experimental geometry to measure the pumped current and verify the predicted behavior of R-H and R-xx.

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