期刊
APPLIED PHYSICS LETTERS
卷 83, 期 18, 页码 3734-3736出版社
AMER INST PHYSICS
DOI: 10.1063/1.1625113
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We have used x-ray photoelectron spectroscopy with high energy resolution to determine band discontinuities at the two buried interfaces of the epitaxial TiO2 (anatase)/SrTiO3/Si(001) system. The valence band offsets are -2.1+/-0.1 eV and +0.2+/-0.1 eV at the SrTiO3/Si and TiO2/SrTiO3 heterojunctions, respectively. Assuming bulk band gaps for the SrTiO3 and TiO2 epitaxial films, the associated conduction band offsets are +0.1+/-0.1 eV and +0.1+/-0.1 eV. Si at the interface is in a flatband state, indicating a very low density of electronic states. These results suggest that spin-polarized electron injection from ferromagnetic Co-doped TiO2 anatase into Si should be facile. (C) 2003 American Institute of Physics.
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