期刊
APPLIED PHYSICS LETTERS
卷 83, 期 19, 页码 3984-3986出版社
AMER INST PHYSICS
DOI: 10.1063/1.1626019
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Atomic-scale electron spectroscopy is used to determine the local electronic structure of atomic-layer-deposited HfO2 gate dielectrics as a function of annealing conditions. Oxygen core-loss spectra from monoclinic crystallites exhibit a more strongly pronounced crystal-field splitting with increasing anneal temperature up to 1000 degreesC, consistent with a decrease in point defects. Concomitantly, electrical measurements of the same structures show a correlated reduction of fixed charge. An unintentional similar to5 Angstrom SiO2 layer is observed at the top interface, between the HfO2 and poly-Si electrode. No Hf-silicate intermixing is detected at either interface on a scale down to 2 Angstrom. (C) 2003 American Institute of Physics.
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