期刊
APPLIED PHYSICS LETTERS
卷 83, 期 19, 页码 4032-4034出版社
AMER INST PHYSICS
DOI: 10.1063/1.1625787
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We report fabrication of homostructural ZnO p-n junctions that contain arsenic (As)-doped ZnO (ZnO:As) and intrinsic n-type ZnO layers. We also describe the metallization process for forming ohmic contacts to p-type ZnO. ZnO films were synthesized on n-type SiC substrates by hybrid beam deposition. Ni/Au metal contacts show linear I-V characteristics indicative of ohmic behavior, while other metal contacts (e.g., In/Au and Ti/Au) show nonlinear characteristics with rectification that reveal the presence of Schottky barriers. The characteristics for p-n junctions composed of ZnO layers are confirmed by I-V measurements. (C) 2003 American Institute of Physics.
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