Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks

A method is presented to achieve thick high quality crack-free AlGaN layers on GaN. This method uses jointly plastic relaxation and lateral growth. In a first step, plastic relaxation by cracking and misfit dislocation introduction is realized. Then the cracks are overgrown to obtain a smooth surface. By this reproducible technique, we grew smooth metal-organic chemical vapor deposition Al0.2Ga0.8N films with a threading dislocation density as low as 5x10(8) cm(-2). This result is the best ever reported for crack-free AlGaN growth over a large area. The control of the complete plastic relaxation opens up perspectives for the realization of high performance devices. In order to explain the mechanisms involved in the full relaxation of the AlGaN/GaN heterostructure, we propose a relaxation scheme and discuss its different steps. (C) 2003 American Institute of Physics.