期刊
THIN SOLID FILMS
卷 445, 期 1, 页码 54-58出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2003.08.050
关键词
thin films; electrical properties; chemical solution deposition; atomic force microscopy (AFM)
类别
资金
- Fundacao de Amparo a Pesquisa do Estado de Sao Paulo (FAPESP) [99/10798-0] Funding Source: FAPESP
Electrically conductive LaNiO3-delta (LNO) thin films with typical thickness of 200 nm were deposited on Si (111) substrates by a chemical solution deposition method and heat-treated in air at 700 degreesC. Structural, morphological, and electrical properties of the LNO thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field-emission scanning electron microscopy (FEG-SEM), and electrical resistivity rho(T). The thin films have a very flat surface and no droplet was found on their surfaces. The average grain size observed by AFM and FEG-SEM was approximately 100 nm in excellent agreement with XRD data. The rho(T) data showed that these thin films display a good metallic character in a large range of temperature. These results suggest the use of this conductive layer as electrode in the integration of microelectronic devices. (C) 2003 Elsevier B.V. All rights reserved.
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