期刊
PHYSICAL REVIEW LETTERS
卷 91, 期 22, 页码 -出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.91.225502
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The mechanisms of laser ablation in silicon are investigated close to the threshold energy for pulse durations of 500 fs and 50 ps. This is achieved using a unique model coupling carrier and atom dynamics within a unified Monte Carlo and molecular-dynamics scheme. Under femtosecond laser irradiation, isochoric heating and rapid adiabatic expansion of the material provide a natural pathway to phase explosion. This is not observed under slower, nonadiabatic cooling with picosecond pulses where fragmentation of the hot metallic fluid is the only relevant ablation mechanism.
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