4.4 Article

Manipulation of spin dephasing in InAs quantum wires

期刊

SOLID STATE COMMUNICATIONS
卷 128, 期 9-10, 页码 365-368

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2003.08.033

关键词

semiconductors; spin dynamics

向作者/读者索取更多资源

The spin dephasing due to the Rashba spin-orbit coupling, especially its dependence on the direction of the electric field is studied in InAs quantum wire. We find that the spin dephasing is strongly affected by the angle of Rashba effective magnetic field and the applied magnetic field (AMF). The nonlinearity in spin dephasing time versus the direction of the electric field shows the potential to manipulate the spin lifetime in spintronic device. Moreover, we figure out a quantity that can well represent the inhomogeneous broadening of the system which may help LIS to understand the many-body spin dephasing due to the Rashba effect. (C) 2003 Elsevier Ltd. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.4
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据