期刊
SOLID STATE COMMUNICATIONS
卷 128, 期 9-10, 页码 365-368出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2003.08.033
关键词
semiconductors; spin dynamics
The spin dephasing due to the Rashba spin-orbit coupling, especially its dependence on the direction of the electric field is studied in InAs quantum wire. We find that the spin dephasing is strongly affected by the angle of Rashba effective magnetic field and the applied magnetic field (AMF). The nonlinearity in spin dephasing time versus the direction of the electric field shows the potential to manipulate the spin lifetime in spintronic device. Moreover, we figure out a quantity that can well represent the inhomogeneous broadening of the system which may help LIS to understand the many-body spin dephasing due to the Rashba effect. (C) 2003 Elsevier Ltd. All rights reserved.
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