4.3 Article Proceedings Paper

Properties of Mn-doped Cu2O semiconducting thin films grown by pulsed-laser deposition

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SOLID-STATE ELECTRONICS
卷 47, 期 12, 页码 2215-2220

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PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0038-1101(03)00200-4

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Semiconducting oxides offer the potential for exploring and understanding spin-based functionality in a semiconducting host material. Theoretical predictions suggest that carrier-mediated ferromagnetism should be favored for p-type material. Cu2O is a p-type, direct wide bandgap oxide semiconductor that may hold interest in exploring spin behavior. In this paper, the properties of Mn-doped Cu2O are described. Activities focused on understanding Mn incorporation during thin-film synthesis, as well as magnetic characterization. The epitaxial films were grown by pulsed-laser deposition. X-ray diffraction was used to determine film crystallinity and to address the formation of secondary phases. SQUID magnetometry was employed to characterize the magnetic properties. Ferromagnetism is observed in selected Mn-doped Cu2O films, but appears to be associated with Mn3O4 secondary phases. In phase-pure Mn-doped Cu2O films, no evidence for ferromagnetism is observed. (C) 2003 Elsevier Ltd. All rights reserved.

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