Generation-recombination noise in doped-channel Al0.3Ga0.7As/GaAs/In0.2Ga0.8As quantum well micro-Hall devices

The generation-recombination noise in doped-channel quantum-well AlGaAs/GaAs/InGaAs micro-Hall devices is characterized using deep level noise spectroscopy. The source of this low-frequency noise contribution is identified as a single deep level with activation energy of 476 meV. This level is associated with DX centers located in the Al0.30Ga0.70As near the heterointerfaces. A detailed analysis of the experimental data further indicates a trap ionization energy of about 250 meV, an electron capture cross section of about sigma(0)similar or equal to1x10(-11) cm(2), and a total integrated defect concentration of about N(ts)similar or equal to1.4x10(10) cm(-2). (C) 2003 American Institute of Physics.