High frequency capacitance-voltage characterization of Al2O3/ZrO2/Al2O3 in fully depleted silicon-on-insulator metal-oxide-semiconductor capacitors

Al2O3/ZrO2/Al2O3 gate stacks were prepared on ultrathin silicon-on-insulator (SOI) by ultrahigh vacuum electron-beam evaporation and postannealed in N-2 at 450 degreesC for 30 min. A three clear nanolaminate layered structure of Al2O3 (2.1 nm)/ZrO2 (3.5 nm)/Al2O3 (2.3 nm) was observed with high-resolution cross-sectional transmission electron microscopy. High frequency capacitance voltage (C-V) characteristics of the fully depleted (FD) SOI metal-oxide-semiconductor (MOS) capacitor at 1 and 5 MHz were studied. It is the minority carriers that determine the high frequency C-V properties, which are opposite to the case of bulk MOS capacitors. And the series resistance of the SOI is the determinant factor of the high frequency characteristics of the FD SOI MOS capacitors. (C) 2003 American Institute of Physics.