期刊
APPLIED PHYSICS LETTERS
卷 83, 期 26, 页码 5443-5445出版社
AMER INST PHYSICS
DOI: 10.1063/1.1637716
关键词
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Future microelectronics will be based upon silicon or germanium-on-insulator technologies and will require an ultrathin (<10 nm), flat silicon or germanium device layer to reside upon an insulating oxide grown on a silicon wafer. The most convenient means of accomplishing this is by epitaxially growing the entire structure on a silicon substrate. This requires a high quality crystalline oxide and the ability to epitaxially grow two dimensional, single crystal films of silicon or germanium on top of this oxide. We describe a method based upon molecular beam epitaxy and solid-phase epitaxy to make such structures and demonstrate working field-effect transistors on germanium-on-insulator layers. (C) 2003 American Institute of Physics.
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