Evidence of electron-stimulated self-diffusion in GaN crystals

In situ transmission electron microscopy (TEM) experiments revealed that dimples formed in hexagonal GaN thin crystals by irradiation of a focused TEM electron beam recovers to flatten the surface under a subsequent electron irradiation with a moderately defocused beam. The electron-stimulated recovery can be attributed neither to knock-on damage nor beam heating effects but to electronically enhanced self-diffusion in the GaN crystals. (C) 2003 Elsevier B.V. All rights reserved.