Complex admittance analysis for La2Hf2O7/SiO2 high-κ dielectric stacks

A method of analyzing the complex admittance of metal-insulator-semiconductor (MIS) structures has been developed with the aim to extract the density and capture cross section of interface traps from combined ac capacitance-voltage and conductance-voltage measurements at different frequencies. The procedure is applied to study dielectric stacks based on La2Hf2O7 high-kappa dielectric, which could be considered as a SiO2 replacement for future transistors. (C) 2004 American Institute of Physics.