期刊
JOURNAL OF NUCLEAR MATERIALS
卷 324, 期 2-3, 页码 134-139出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jnucmat.2003.09.012
关键词
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The etching of uranium oxide films was investigated with a non-thermal, atmospheric pressure plasma fed with a mixture of 2.0 kPa carbon tetrafluoride, 880.0 Pa oxygen and 97.2 kPa helium. Etching rates of up to 4.0 mum/min were recorded at a 200 degreesC sample temperature. X-ray photoemission spectroscopy revealed that the etched surface was highly fluorinated, containing UOF4 species during the etching process. An average surface reaction rate was estimated to be 1.9 x 10(19) UF6 molecules/m(2) S. (C) 2003 Elsevier B.V. All rights reserved.
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