Room temperature growth of zinc oxide films on Si substrates by the RF magnetron sputtering

in this paper, ZnO thin films with c-axis (002) orientation have been successfully gown at room temperature on the Si substrates by a radio frequency (RF) magnetron sputtering technique. We demonstrated that the RF power affects the grain structure of the films by varying the film thickness. With the fixed film thickness, decreasing the RF power helped to increase the compression stress and to reduce the grain size. (C) 2003 Elsevier B.V. All rights reserved.