期刊
MATERIALS LETTERS
卷 58, 期 6, 页码 970-974出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2003.08.009
关键词
catalysts; sol-gel preparation; photochemical technology; photocatalysis; semiconductors; TiO2; SiC; shape memory materials
A new medium surface area TiO2-beta-silicon carbide (beta-SiC) material was obtained by the Shape Memory Synthesis (SMS) method in which a pre-shaped high surface area activated charcoal (AC) supporting TiO2, obtained by a sol-gel process starting from an alkoxide precursor, was attacked by SiO vapor at 1300degreesC under dynamic vacuum. A post-synthesis oxidation using the inertness of beta-SiC towards oxidation led to the TiO2-beta-SiC material. (C) 2003 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据