期刊
SOLID STATE COMMUNICATIONS
卷 129, 期 6, 页码 353-357出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2003.11.004
关键词
GaAsN; GaInNAs; photoreflectance
The temperature dependence of bandgap energy of GaAs0.98N0.02 and Ga0.95In0.05As0.98N0.02 compounds has been analysed in order to determine the C-MN matrix element of the band anticrossing model. We have found that the element equals 2.48 and 2.60 eV for GaAs0.98N0.02 and Ga0.95In0.05As0.98N0.02 layers, respectively. When the same value has been assumed for annealed layers, an increase in the energy of the resonant nitrogen level EN has been obtained. Two possible mechanisms leading to the increase in this energy are discussed in this work. (C) 2003 Elsevier Ltd. All rights reserved.
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