Electrical and optical control of ferromagnetism in III-V semiconductor heterostructures at high temperature (∼100 K)

We demonstrate the electrical and optical control of ferromagnetism in semiconductor heterostructures at high temperatures of 100-117 K. The heterostructures consist of Mn delta (delta)-doped GaAs and p-type AlGaAs. We are able to isothermally change the paramagnetic state to the ferromagnetic state and vice versa, by applying a gate electric-field or by light irradiation. The large modulation of T-C (Delta T-C similar to 15 K) at high temperatures (> similar to100 K) demonstrated here may pave the way for functional device applications compatible with the present semiconductor technology.