期刊
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
卷 14, 期 2, 页码 56-58出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMWC.2003.822575
关键词
HEMTs; millimeter-wave power amplifiers; MMIC amplifiers
This paper describes a power amplifier (PA) module containing an InP High Electron Mobility Transistor (HEMT) Monolithic Millimeter-wave Integrated Circuit (MMIC) amplifier chip, designed, and packaged at the Jet Propulsion Laboratory, and fabricated at HRL Laboratories. The module features 20 mW of output power at 150 GHz, with more than 10 mW available in the 148-160 GHz frequency range.
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