4.6 Article

Exciton formation and stability in semiconductor heterostructures

期刊

PHYSICAL REVIEW B
卷 69, 期 7, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.69.073104

关键词

-

向作者/读者索取更多资源

The formation and stability of excitons in semiconductors is studied on the basis of a microscopic model that includes Coulomb interacting fermionic electrons and holes as well as phonons. Whereas quasiequilibrium calculations predict substantial exciton fractions coexisting with an electron-hole plasma at low temperatures and densities, dynamic calculations reveal that the exciton formation times under these conditions exceed the characteristic lifetimes. At elevated densities, good agreement between dynamical and quasiequilibrium calculations is obtained.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据