期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
卷 43, 期 2A, 页码 L227-L229出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.43.L227
关键词
SrRuO3; pulsed laser deposition; oxide thin film; anisotropic magnetization; strain control; lattice constant tunable buffer
Coherently-grown heteroepitaxial oxide thin films on single crystal substrates are always under elastic strain. This strain causes changes in the physical properties of thin films. We have studied the behavior of anisotropic magnetic properties of SrRuO3 films grown directly on SrTiO3 and on Ba1-xSrTiO3/BaTiO3 bilayer buffer layers. The in-plane lattice constant of the buffer layer was adjusted between 3.91 and 3.99 Angstrom by changing the Ba/Sr ratio in the Ba1-xSrxTiO3 layer. It was found that the easy axis of magnetization is perpendicular to the surface in compressively strained films and rotates into the in-plane direction in strain-free films. Tensile strain was found to increase the ferromagnetic ordering temperature of SrRuO3 from 160 K to 164 K.
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