期刊
SOLID STATE COMMUNICATIONS
卷 129, 期 7, 页码 437-441出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2003.11.020
关键词
semiconductors; phase transitions; surface stress
The temperature-pressure phase diagram [T-P] for silicon (Si) is predicted through the Clapeyron equation where the pressure-dependent volume difference is modeled and the corresponding thermodynamic amount of solid transition enthalpy is calculated by introducing the effect of surface stress induced pressure. The model prediction is found to be consistent with the present experimental results and other theoretical predictions. (C) 2003 Elsevier Ltd. All rights reserved.
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