期刊
SCIENCE
卷 303, 期 5659, 页码 816-818出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1091600
关键词
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We have probed the local thermoelectric power of semiconductor nanostructures with the use of ultrahigh-vacuum scanning thermoelectric microscopy. When applied to a p-n junction, this method reveals that the thermoelectric power changes its sign abruptly within 2 nanometers across the junction. Because thermoelectric power correlates with electronic structure, we can pro. le with nanometer spatial resolution the thermoelectric power, band structures, and carrier concentrations of semiconductor junctions that constitute the building blocks of thermoelectric, electronic, and optoelectronic devices.
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