Correlations between pressure and bandwidth effects in metal-insulator transitions in manganites

The effect of pressure on the metal-insulator transition in manganites with a broad range of bandwidths is investigated. A critical pressure is found at which the metal-insulator transition temperature, T-MI, reaches a maximum value in every sample studied. The origin of this universal pressure and the relation between the pressure effect and the bandwidth on the metal-insulator transition are discussed. (C) 2004 American Institute of Physics.