Young's modulus of silicon nitride used in scanning force microscope cantilevers

The Young's modulus and Poisson's ratio of high-quality silicon nitride films with 800 nm thickness, grown on silicon substrates by low-pressure chemical vapor deposition, were determined by measuring the dispersion of laser-induced surface acoustic waves. The Young's modulus was also measured by mechanical tuning of commercially available silicon nitride cantilevers, manufactured from the same material, using the tapping mode of a scanning force microscope. For this experiment, an expression for the oscillation frequencies of two-media beam systems is derived. Both methods yield a Young's modulus of 280-290 GPa for amorphous silicon nitride, which is substantially higher than previously reported (E=146 GPa). For Poisson's ratio, a value of nu=0.20 was obtained. These values are relevant for the determination of the spring constant of the cantilever and the effective tip-sample stiffness. (C) 2004 American Institute of Physics.