期刊
APPLIED PHYSICS LETTERS
卷 84, 期 8, 页码 1242-1244出版社
AMER INST PHYSICS
DOI: 10.1063/1.1649803
关键词
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We report the design, device fabrication, and measurements of tunable silicon photonic band gap microcavities in optical waveguides, using direct application of piezoelectric-induced strain to the photonic crystal. We show, through first-order perturbation computations and experimental measurements, a 1.54 nm shift in cavity resonances at 1.56 mum wavelengths for an applied strain of 0.04%. The strain is applied through integrated piezoelectric microactuators. For operation at infrared wavelengths, we combine x-ray and electron-beam lithography with thin-film piezoelectric processing. This level of integration permits realizable silicon-based photonic chip devices, such as high-density optical filters, with active reconfiguration. (C) 2004 American Institute of Physics.
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