Strain-tunable silicon photonic band gap microcavities in optical waveguides

We report the design, device fabrication, and measurements of tunable silicon photonic band gap microcavities in optical waveguides, using direct application of piezoelectric-induced strain to the photonic crystal. We show, through first-order perturbation computations and experimental measurements, a 1.54 nm shift in cavity resonances at 1.56 mum wavelengths for an applied strain of 0.04%. The strain is applied through integrated piezoelectric microactuators. For operation at infrared wavelengths, we combine x-ray and electron-beam lithography with thin-film piezoelectric processing. This level of integration permits realizable silicon-based photonic chip devices, such as high-density optical filters, with active reconfiguration. (C) 2004 American Institute of Physics.