4.8 Article Proceedings Paper

A resonant MOSFET gate driver with efficient energy recovery

期刊

IEEE TRANSACTIONS ON POWER ELECTRONICS
卷 19, 期 2, 页码 470-477

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2003.823206

关键词

DC-DC power conversion; high frequency; IGBT; power MOSFET; PWM; resonant gate drive

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High frequency pulse-width modulation (PWM) converters generally suffer from excessive gate drive loss. This paper presents a resonant gate drive circuit that features efficient energy recovery at both charging and discharging transitions. Following a brief introduction of metal oxide semiconductor field effect transistor (MOSFET) gate drive loss, this paper discusses the gate drive requirements for high frequency PWM applications and common shortcomings of existing resonant gate drive techniques. To overcome the apparent disparity, a new resonant MOSFET gate drive circuit is then presented. The new circuit produces low gate drive loss, fast switching speed, clamped gate voltages, immunity to false trigger and has no limitation on the duty cycle. Experimental results further verify its functionality.

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