期刊
IEEE TRANSACTIONS ON NANOTECHNOLOGY
卷 3, 期 1, 页码 98-104出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2003.820774
关键词
nanotechnology; Schottky barriers; Schottky diodes; Schottky logic circuits; Schottky logic devices; silicon-on-insulator (SOI) technology
A new method for dramatically lowering the Schottky barrier resistance at a metal/Si interface by interposing an ultrathin insulator is demonstrated for the first time, with thermionic barriers less than those reported to date with silicides. Results with Er and near-monolayer thermal SiNx at the interface are consistent with simulations of effective metal Fermi level separations from the silicon conduction band of 0.15 V for n-type Si and 45 mV for p-type Si. Simulations of advanced metal source/drain (S/D) ultrathin-body CMOS devices in comparison with competitive doped S/D devices show a significant performance advantage with a barrier to the conduction band of up to 0.1 V.
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