期刊
SURFACE & COATINGS TECHNOLOGY
卷 180, 期 -, 页码 20-25出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.surfcoat.2003.10.025
关键词
gallium; zinc oxide; thin film; r.f. magnetron sputtering; transparent conductive oxide; polymeric substrates
Gallium-doped zinc oxide (GZO) thin films have been deposited onto polyethylene naphthalate (PEN) substrates by r.f. magnetron sputtering at room temperature. The influence of the film thickness (from 70 to 890 nm) on the electrical, structural and morphological properties are presented. The lowest resistivity obtained was 5 x 10(-4) Omega cm with a Hall mobility of 13.7 cm(2)/Vs and a carrier concentration of 8.6 x 10(20) cm(-3). These values were obtained by passivating the surface of the polymer with a thin silicon dioxide, so preventing the moisture and oxygen permeation inside the film. (C) 2003 Elsevier B.V. All rights reserved.
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