期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 16, 期 3, 页码 864-866出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2004.823773
关键词
high photocurrent; high-power photodiodes; microwave photonics; photodetectors; photodiode; radio-frequency (RF) photonics; uni-traveling-carrier (UTC) photodiode
Charge compensation is utilized in an InGaAs-InP uni-traveling-carrier photodiode to mitigate the space-charge effect. A 20-mum-diameter photodiode achieved a bandwidth of 25 GHz and large-signal 1-dB compression current greater than 90 mA; the output power at 20 GHz was 20 dBm. A smaller similar to100-mum(2) photodiode exhibited a bandwidth of 50 GHz and large-signal 1-dB compression current greater than 50 mA. The maximum RF output power at 40 GHz was 17 dBm.
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