期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 51, 期 3, 页码 444-451出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2003.823245
关键词
band-to-band-tunneling (BTBT); channel hot electrons (CHE); gate-induced drain leakage (GIDL); localized charge; nitride read-only memory (NROM); programming transfer function (PTF); spatial distribution; subthreshold
A novel measurement method to extract the spatial distribution of channel hot electron injection is described. The method is based on characterization of localized trapped-charge in the nitride read-only memory (NROM) device. The charge distribution is determined by iteratively fitting simulated subthreshold and gate induced drain leakage (GIDL) currents to measurements. It is shown that the subthreshold and the GIDL measurements are sensitive to charge trapped over the n+ junction edge. Their characteristics are determined by the trapped charge width, densitiy and location and the associated fringing field. Extremely high sensitivity of the GIDL measurement to localized charge over the n+ junction is demonstrated. The extracted charge distribution width is shown to be similar to 40 nm, located over the junction edge.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据