期刊
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
卷 241, 期 3, 页码 783-790出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssb.200304296
关键词
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Good detection efficiency and high energy-resolution make Cadmium Zinc Telluride (CdZnTe) and Cadmium Telluride (CdTe) detectors attractive in many room temperature X-ray and gamma-ray detection applications such as medical and industrial imaging, industrial gauging and non-destructive testing, security and monitoring, nuclear safeguards and non-proliferation, and astrophysics. Advancement of the crystal growth and device fabrication technologies and the reduction of bulk, interface and surface defects in the devices are crucial for the widespread practical deployment of Cd1-xZnxTe-based detector technology. Here we review the effects of bulk, interface and surface defects on charge transport, charge transport uniformity and device performance and the progress in the crystal growth and device fabrication technologies aiming at reducing the concentration of harmful defects and improving Cd1-xZnxTe detector performance. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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