期刊
SURFACE SCIENCE
卷 551, 期 3, 页码 151-157出版社
ELSEVIER
DOI: 10.1016/j.susc.2004.01.009
关键词
lead; silicon; metal-semiconductor interfaces; surface electronic phenomena (work function; surface potential, surface states, etc); growth
We have found that the degeneracy pressure of electrons (DPE) inside Pb islands grown on a silicon substrate plays a crucial role in stabilizing the islands. In most cases, at a metal-semiconductor interface charge spilling takes place due to the difference of Fermi energies between the two materials, which makes DPE decrease along with the energy of the system. Based on this new effect, calculations of energy as a function of height are carried out for Pb islands grown on Si(111)-(root3- x root3) and -(7 x 7) phases, which have most stable heights of 5 and 7 monolayers (ML), respectively. Our results explain why these most stable heights are observed. Using this new effect supplemented with experimental data, all the preferred heights of the Ph islands on Si(1 1 1)-(7 x 7) can be explained too. (C) 2004 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据