期刊
ADVANCED MATERIALS
卷 16, 期 5, 页码 453-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200306194
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A new approach to the '3D solar-cell concept' is reported. Atomic layer chemical vapor deposition is employed to infiltrate CuInS2 into the pores of nanostructured TiO2. In this way it is possible to obtain a nanometer-scale interpenetrating network between n-type TiO2 and p-type CuInS2. Cells created this way show photovoltaic activity with a maximum monochromatic incident photon-to-current conversion efficiency of 80%.
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