期刊
SURFACE SCIENCE
卷 552, 期 1-3, 页码 281-293出版社
ELSEVIER
DOI: 10.1016/j.susc.2004.01.031
关键词
iridium; surface defects; scanning tunneling microscopy; metallic films; growth; nucleation
The growth of a thin fiIm in the presence of stacking faults is studied from the nucleation phase to the closure of the first monolayer in the face-centered cubic (fcc) system Ir/Ir(1 1 1) using, temperature-variable scanning tunneling microscopy. The islands that nucleate in the hexagonal close-packed (hcp) stacking cannot coalesce with the regular islands. instead, an assimilation process is observed, where material is transported from the metastable hcp to the energetically favorable fcc sites. The atomic mechanisms governing this transfer are identified. (C) 2004 Elsevier B.V. All rights reserved.
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