期刊
JOURNAL OF CRYSTAL GROWTH
卷 264, 期 1-3, 页码 21-25出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2003.12.041
关键词
nanostructures; molecular beam epitaxy; antimonides; semiconducting III-V materials
We investigated the heteroepitaxial growth of GaSb on Si(001) substrate. We found that high-quality GaSb films can be grown on Si substrate by introducing an AlSb initiation layer. We obtained a narrow X-ray diffraction rocking curve and over-1400-nm emission from GaSb/AlGaSb quantum wells by optimizing the growth temperature and thickness of the AlSb initiation layer. During the growth of GaSb, the AlSb initiation layer played two important roles for improving crystal quality; i.e., it acted as a surfactant and as a buffer layer preventing generation and propagation of dislocations. (C) 2004 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据