期刊
THIN SOLID FILMS
卷 451, 期 -, 页码 133-136出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2003.11.003
关键词
CuInSe2; Cu(InGa)Se-2; thin films; absorption; photoluminescence
Polycrystalline CuInGaSe2 (CIGS) and CulnSe(2) (CIS) thin films were synthesized on glass substrates by a two-Stage selenization process. The surface morphology, phase structure and composition of the films were analyzed by scanning electron microscopy, X-ray diffraction and energy-dispersive X-ray analysis, respectively. Photoluminescence, optical transmission and reflection spectra were measured at temperatures from 4.2 to 300 K to characterize defects and the structural quality. The structural quality and evolution of defects in the CIS films grown at different temperatures and selenization time, and dependence of the band-Pp energy on the content of Ga in CIGS films at 78 K is discussed. (C) 2003 Elsevier B.V. All rights reserved.
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