期刊
APPLIED PHYSICS LETTERS
卷 84, 期 12, 页码 2106-2108出版社
AMER INST PHYSICS
DOI: 10.1063/1.1689402
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We demonstrate electroluminescence (EL) with an external efficiency of more than 0.1% at room temperature from glide dislocations in silicon. The key to this achievement is a considerable reduction of nonradiative carrier recombination at dislocations due to impurities and core defects by impurity gettering and hydrogen passivation, respectively, which is shown by means of deep-level transient spectroscopy. Time-resolved EL measurements reveal a response time below 1.8 mus, which is much faster, compared to the band-to-band luminescence of bulk silicon. (C) 2004 American Institute of Physics.
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