期刊
APPLIED PHYSICS LETTERS
卷 84, 期 13, 页码 2328-2330出版社
AMER INST PHYSICS
DOI: 10.1063/1.1689393
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We have performed photoemission spectroscopy of high-k gate insulators HfO2/HfSiON/Si to investigate the interlayer formation by Hf metal predeposition and the annealing effect systematically. Comparing the line shapes of core-level photoemission spectra for two systems with and without Hf-metal predeposition, we found that Hf-metal predeposition effectively reduces the growth of interface layer. Hf 4f core-level spectra revealed that the annealing at 1000 degreesC for both samples causes the formation of the metallic Hf and Hf-silicide clusters. Surface morphology was also observed by atomic force microscopy. (C) 2004 American Institute of Physics.
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