期刊
APPLIED PHYSICS LETTERS
卷 84, 期 13, 页码 2331-2333出版社
AMER INST PHYSICS
DOI: 10.1063/1.1689401
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We report on the resonant, voltage tunable emission of terahertz, radiation (0.4-1.0 THz) from a gated two; dimensional electron gas in a 60 nm InGaAs high electron mobility transistor. The emission is interpreted as resulting from a current driven plasma instability leading to oscillations in the transistor channel (Dyakonov-Shur instability). (C) 2004 American Institute of Physics.
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