Electrodeposition of Mo-Se thin films from a sulfamatic electrolyte

Mo-Se thin films have been electrodeposited on conducting tin oxide (SnO2) coated glass substrates from a sulfamatic solution containing Na2MoO4 and H2SeO3 under potentiostatic conditions. The deposition potential varied from -0.6 V to -0.9 V, at a deposition temperature of 20-40 degreesC and pH 6.5. X-ray diffraction analysis revealed that the overall composition of the films deposited is consistent with the formation of MoO2 and MoSe2. The lattice parameters of the as-deposited MoSe2 are a=b=3.2340 Angstrom and c=13.2859 Angstrom, which fits a hexagonal structure.